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Si2307CDS
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
FEATURES
V DS (V)
- 30
R DS(on) ( Ω )
0.088 at V GS = - 10 V
0.138 at V GS = - 4.5 V
I D (A) a, b
- 2.7
- 2.2
Q g (Typ.)
4.1 nC
? Halogen-free Option Available
? TrenchFET ? Power MOSFET
APPLICATIONS
RoHS
COMPLIANT
TO-236
(SOT-23)
? Load Switch for Portable Devices
G
1
S
2
3
D
S
G
Top View
Si2307CDS (N7)*
* Marking Code
Ordering Information: Si2307CDS-T1-E3 (Lead (Pb)-free)
Si2307CDS-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
D
P-Channel MOSFET
Parameter
Drain-Source Voltage
Gate-Source Voltage
T C = 25 °C
Symbol
V DS
V GS
Limit
- 30
± 20
- 3.5
Unit
V
Continuous Drain Current (T J = 150 °C) a, b
Pulsed Drain Current (10 μs Pulse Width)
Continuous Source-Drain Diode Current a, b
T C = 70 °C
T A = 25 °C
T A = 70 °C
T C = 25 °C
T A = 25 °C
T C = 25 °C
I D
I DM
I S
- 2.8
- 2.7 a, b
- 2.2 a, b
- 12
- 1.5
- 0.91 a, b
1.8
A
Maximum Power Dissipation a, b
T C = 70 °C
T A = 25 °C
P D
1.14
1.1 a, b
W
T A = 70 °C
0.7 a, b
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) c
T J , T stg
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient a, c
Maximum Junction-to-Foot (Drain)
t ≤ 5s
Steady State
R thJA
R thJF
90
55
115
70
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 5 s.
c. Maximum under Steady State conditions is 166 °C/W.
Document Number: 68768
S-81580-Rev. A, 07-Jul-08
www.vishay.com
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